Nanocapacitors increase memory storage

Ferroelectric materials are promising alternatives to magnetic and dielectric materials for non-volatile data storage. However, the problem is that ferroelectrics are easily damaged by conventional lithographic techniques. A different approach, called stencil patterning, could be a solution.
Woo Lee of the Max Planck Institute of Microstructure Physics in Halle, Germany, and colleagues in Korea, have used their stencilling method to create a high-density array of ferroelectric nanocapacitors with a density of 176 Gb/inch2 – a record for this material. The technique does not damage the sensitive ferroelectric structures, unlike existing “top-down” lithography.
Ferroelectric materials are so called because they have permanent electrical dipoles, analogous to magnetic dipoles in iron. Like the north and south pole of a magnet, the positive and negative poles of a permanent electric dipole can be interchanged, but much more quickly. The material can thus permanently save data, as in hard-drive technology, but processes it as quickly as a working memory.

Source and more info: http://nanotechweb.org/cws/article/tech/35503

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~ by vascoteixeira on August 25, 2008.

 
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