Lower-Dark-Current, Higher-Blue-Response CMOS Imagers
Semiconductor junctions are relocated away from Si/SiO2 interfaces.
Several improved designs for complementary metal oxide/semiconductor (CMOS) integrated- circuit image detectors have been developed, primarily to reduce dark currents (leakage currents) and secondarily to increase responses to blue light and increase signal- handling capacities, relative to those of prior CMOS imagers. The main conclusion that can be drawn from a study of the causes of dark currents in prior CMOS imagers is that dark currents could be reduced by relocating p/n junctions away from Si/SiO2 interfaces. In addition to reflecting this conclusion, the improved designs include several other features to counteract dark-current mechanisms and enhance performance.
NASA’s Jet Propulsion Laboratory
Aug 01 2008 NASA Tech Briefs
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