23rd International Conference on Amorphous and Nanocrystalline Semiconductors

23rd International Conference on Amorphous and Nanocrystalline Semiconductors

August 23-28, 2009, Utrecht, the Netherlands

 

Call for Papers

 

Abstract deadline: February 15, 2009

 

http://www.icans23.org

 

 

The 23rd International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS23) continues the tradition of biennial conferences that have served since 1965 (Prague) as the premier forum for scientific and technological exchange among researchers investigating amorphous semiconductors and related materials.

 

Topics range from the physics and chemistry of fundamental phenomena to the engineering of materials and devices. Since 1997, focus on microcrystalline and nanocrystalline semiconductors adds to the traditional emphasis on amorphous thin films such as a-Si:H and bulk glasses such as the chalcogenides. Since 2004, also organic semiconductors have a prominent position in the conference. The conference will thus provide opportunities for cross-fertilization among researchers studying diverse material systems.

 

 

Abstract submission will be possible at http://www.icans23.org starting January 15, 2009.

 

Papers are solicited on:

 

Materials

Films of amorphous Si, Ge, C and their alloys

Thin-film and bulk chalcogenides

Metal-oxide films for optoelectronics

Organic semiconductors / Novel semiconductors

Biological and bio-compatible films

Nano- and micro-crystalline semiconductors

Nanostructured oxides / Ovonics

Core shell systems

 

Properties, Theory, and Modeling

Electronic structure and transport

Defects

Optical properties / Photonics

Mechanical properties

Metastability

Role of hydrogen, dopants, and impurities

Medium-range order

Nano- and micro-scale structures, phase separation, and self-organization

Surfaces and interfaces

 

Growth and Processing

Thin-film growth methods and mechanisms

Film growth at high rates and low temperatures

Glass formation from the melt

Phase changes: amorphization / crystallization

Evolution of nanocrystalline morphology

In-situ monitoring and diagnostics

Large area deposition

 

Devices and Applications

Solar cells

Thin-film transistors

Phase-change memories

Flexible electronics

Detectors, sensors, bolometers, and imagers

Transparent conductors and electronics

Electrochromics

Waveguides and photonic crystals

Biosensors and biological microarrays

Microelectromechanical systems

 

Tutorials

Tutorials have been planned on the following subjects:

 

·         Basic physics of disordered semiconductors, by Martin Stutzmann

 

·         Growth and preparation methods, by Alan Howling

 

·         Characterization techniques, by Reinhard Carius

 

·         Current and future applications, by Bob Street

 

 

Venue:

 

The conference will be held in the city of Utrecht, the Netherlands. This location is easily reached by major airlines through Schiphol airport, Amsterdam. From the airport, frequent trains directly connect to Utrecht in 32 minutes. The weather in August is quite comfortable (20 °C).

 

We are looking forward to seeing you in the Netherlands,

 

Ruud E.I. Schropp

 

Chair of ICANS23, Utrecht University, Utrecht, the Netherlands, August 23-28, 2009

 

www.icans23.org

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2 Responses to “23rd International Conference on Amorphous and Nanocrystalline Semiconductors”

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