Post-doc for MBE of (In,Ga,Al)As nanowires at Paul Drude Institute for Solid State Electronics

Postdoc: Postdoc for MBE of (In,Ga,Al)As nanowires
At Paul Drude Institute for Solid State Electronics, Epitaxy Field(s): applied physics
Application deadline: Sep 16 (Wed)
Contact: Dr. L.Geelhaar E-mail:
Phone: +49 30 203 77 359 Fax: +49 30 203 77 201
Address: Hausvogteiplatz 5-7 10117 Berlin Germany

Job description:
PDI has a long-standing expertise in molecular beam epitaxy of III-V semiconductor layers.

For some time we have been extending these activities to the self-organized growth of nanowires. In this case, the tiny cross-section allows new epitaxial material combinations, and particularly exciting is the monolithic integration of III-V compounds on silicon.

We are seeking a postdoc to strengthen our team with the goal to realize a LED on Si based on III-As nanowires.

You will grow samples by molecular beam epitaxy, carry out standard material characterization, and participate in device processing.

This work is part of a larger activity with both internal and external collaborators. We are looking for a new colleague who enjoys working in a highly motivated team of researchers and technicians. You should have a PhD in physics, materials science, electrical engineering, or a related field, and experience in experimental solid state physics.

Expertise in growth of thin films or nanostructures is desirable.

This position is temporary. Payment is according to TVöD (Treaty for German public service). PDI is an equal opportunity employer. Therefore, female candidates are encouraged to apply and will be preferred in case of adequate qualification. Among equally qualified applicants preference will be given to disabled candidates.

Please submit your application by September 15, 2009 to

Dr. Lutz Geelhaar,,

+49 30 20377-359

Paul Drude Institute, Hausvogteiplatz 5-7,
D-10117 Berlin, Germany


~ by vascoteixeira on August 28, 2009.

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